XC95216-15PQG160I DataSheet
DATASHEET
XC95216-15PQG160I 描述
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products to have been in sufficient production volume such that sub- sequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.
XC95216-15PQG160I 特点
Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 6 and a VDS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post- irra- diation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, col- umn 1, XC95216-15PQG160I. Post-irradiation limits of the de- vices irradiated to 1 x 106 Rads (Si) are presented in
XC95216-15PQG160I 应用
• as a function of the output voltage. Full current limit of 500 mA (nominal) is available up to approximately VO = 8 V; above this the limit is reduced linearly to about 350 mA at VO = 32 V. This helps to improve SOA by immediately reducing the peak power pulse into a shorted load at high VO.
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