MC79L05ACDR DataSheet
DATASHEET
MC79L05ACDR 描述
In addition to the column address, A10(=AP) is used to invoke autoprecharge operation at the end of the burst read or write cycle. If A10 is high, autoprecharge is selected and BA0, BA1 defines the bank to be precharged. If A10 is low, autoprecharge is disabled. During a Precharge command cycle, A10(=AP) is used in conjunction with BA0 and BA1 to control which bank(s) to precharge. If A10 is high, all four banks will BA0 and BA1 are used to define which bank to precharge.
MC79L05ACDR 特点
International Rectifier´s MC79L05ACDR is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the MC79L05ACDR is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED MC79L05ACDR is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
MC79L05ACDR 应用
Technical/Catalog InformationMC79L05ACDRVendorTexas Instruments (VA)CategoryIntegrated Circuits (ICs) Regulator Type
相关型号
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厂商
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描述
询价
9847
11+
Eight-bit PWM current control is built in for all
7290
11+
Low, 55µA No-Load Supply Current Guaranteed
9427
08+
S3901/S3904 series do not require any DC voltage
4722
11+
• Stabilized power supply Provides po
11845
HIGH SPEED: tPD = 0.5ns (TYP.) at VCC = 5V
4968
Notes a. Room = 25_C, Full = - 40 to 85_C. b. T
5136
Read and write accesses to the DDR SDRAM are burs
16727
A power ready/undervoltage lockout function outpu