BQ2057WSNTR DataSheet
DATASHEET
BQ2057WSNTR 描述
The LH28F016SU is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M 16 or 2M 8. The LH28F016SU includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is shown in Figure 4.
BQ2057WSNTR 特点
The Hynix BQ2057WSNTR Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
BQ2057WSNTR 应用
Technical/Catalog InformationBQ2057WSNTRVendorTexas InstrumentsCategoryIntegrated Circuits (ICs) Battery Type