MSP430F2132IPWR DataSheet
DATASHEET
MSP430F2132IPWR 描述
Power supply voltage VCCs = 2.7 V~3.6 V VCCf = 2.7 V~3.6 V Data retention supply voltage VCCs = 1.5 V~3.6 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level) Block erase architecture for flash memory 8 blocks of 8 Kbytes 63 blocks of 64 Kbytes Organization
MSP430F2132IPWR 特点
Data Transfer All data transfers to and from the MSP430F2132IPWR occur in 8-bit groups. They are synchronized to the clock signal (SCK), and they transfer most significant bit (MSB) first. Serial inputs are registered on the rising edge of SCK. Outputs are driven from the falling edge of SCK.
MSP430F2132IPWR 应用
Technical/Catalog InformationMSP430F2132IPWRVendorTexas Instruments (VA)CategoryIntegrated Circuits (ICs) Program Memory Size